Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier

Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along the hard axis

Related Articles Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs J. Appl. Phys. 113, 093708 (2013) Static and dynamic properties of Fibonacci multilayers J. Appl. Phys. 113, 17C102 (2013) Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers J. Appl. Phys. 113, 093906 (2013) ...

Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes: Influence of annealing temperature

Low frequency noise has been measured in magnetic tunnel junctions with MgO barriers and magnetoresistance values up to 235%. The authors investigated the noise for different degrees of crystallization and CoFeB/MgO interface quality depending on the annealing temperature. The authors report an extremely low 1/ f noise, compared to magnetic junctions with Al2O3 barriers. The origin of the low f...

FILM DEPOSITION AND MICROFABRICATION OF MAGNETIC TUNNEL JUNCTIONS WITH AN MgO BARRIER

..................................................................................................................... 3 List of Tables .......................................................................................................... 14 Author’s Declaration ............................................................................................. 16

MgO-based double barrier magnetic tunnel junctions with thin free layers

The free layer thickness tfree in double barrier magnetic tunnel junctions DMTJs based on crystalline MgO barriers and CoFeB ferromagnetic layers has been varied from 0.5 to 3.0 nm in order to investigate its effect on the magnetic and electrical properties. One obvious feature of DMTJs with tfree 1 nm is the absence of sharp free layer switching in the TMR curves, which can be explained by the...

Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer